Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2008-04-29
2008-04-29
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000, C365S158000
Reexamination Certificate
active
11180955
ABSTRACT:
A low-power memory device that uses hole-mediated ferromagnetism creates substantial advantages over conventional systems. Some of these advantages include reducing power consumption by several orders of magnitude and facilitating wireless monitoring of memory cells. In one implementation, an electronic device is described that includes a plurality of memory cells. Each of the memory cells has a material with first and second magnetic states. The material is in the first magnetic state when a contact associated with the material is at a first voltage, and the material is in the second magnetic state when the contact is at a second voltage. A conductor is positioned proximate to and extending around the plurality of memory cells. An inductive voltage across the conductor varies when at least one of the memory cells changes magnetic state. A detection device determines the magnetic state of the memory cells based on an inductive voltage measurement.
REFERENCES:
patent: 4803658 (1989-02-01), Grimes
patent: 6750491 (2004-06-01), Sharma et al.
patent: 6937434 (2005-08-01), Takahashi
patent: 6954373 (2005-10-01), Perner
patent: 6956766 (2005-10-01), Nakamura et al.
patent: 7218550 (2007-05-01), Schwabe et al.
D. Gidding, Large Tunneling Anisotropic Magnetoresistance in (Ga,Mn)As Nanoconstrictions, Apr. 1, 2005, p. 127202-1.
Au, E.K.S., et al.,A novel current-mode sensing scheme for magnetic tunnel junction MRAM. IEEE Transactions on magnetics2004. 40(2): p. 483-8.
Daweritz, L., et al.,Thickness dependence of the magnetic properties of MnAs films on GaAs(001)and GaAs(113)A: role of a natural array of ferromagnetic stripes. Journal of Applied Physics, 2004. (6(9): p. 5056-62.
Daughton,Magnetoresistive Random Access Memory(MRAM), pp. 1-13 (2000).
Dietl, et al.,Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors, The American Physical Society, pp. 195205-1-195205-21 (2001).
Ferrand, et al.,Carrier-induced ferromagnetic interactions in p-dopedZn(1−x)MnxTe epilayers, Journal of Crystal Growth 214/215, pp. 387-390 (2000).
Haury, et al.,Observation of a Ferromagnetic Transition Induced by Two-Dimensional Hole Gas in Modulation-Doped CdMnTe Quantum Wells, vol. 79, No. 3, pp. 511-514 (1997).
Ohno, et al., (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs, American Institute of Physics: Appl. Phys. Lett. 69 (3), pp. 363-365 (1996).
Ohno, et al.,Magnetotransport Properties of p-Type(In,Mn)As Diluted Magnetic III-V Semiconductors, Physical Review Letters, vol. 68, No. 17, pp. 2664-2667 (1992).
Reohr, W., et al.,Memories of tomorrow. IEEE Circuits & Devices Magazine, 2002. 18(5): p. 17-27.
Ferrand, et al.,Indication of Ferromagnetic Ordering in p-Zn1−xMnxTe. Physica B 284-288, 1177 (2000).
Ohno, H., et al.,Electric-field control of ferromagnetism. Letters to nature, 2000. 408: p. 944-46.
Khitun Alexander
Wang Kang L.
Elms Richard T.
Needle & Rosenberg P.C.
Nguyen Dang
The Regents of the University of California
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