Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2008-04-29
2008-04-29
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000, C365S158000
Reexamination Certificate
active
07366011
ABSTRACT:
A low-power memory device that uses hole-mediated ferromagnetism creates substantial advantages over conventional systems. Some of these advantages include reducing power consumption by several orders of magnitude and facilitating wireless monitoring of memory cells. In one implementation, an electronic device is described that includes a plurality of memory cells. Each of the memory cells has a material with first and second magnetic states. The material is in the first magnetic state when a contact associated with the material is at a first voltage, and the material is in the second magnetic state when the contact is at a second voltage. A conductor is positioned proximate to and extending around the plurality of memory cells. An inductive voltage across the conductor varies when at least one of the memory cells changes magnetic state. A detection device determines the magnetic state of the memory cells based on an inductive voltage measurement.
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Khitun Alexander
Wang Kang L.
Elms Richard T.
Needle & Rosenberg P.C.
Nguyen Dang
The Regents of the University of California
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