Power amplifier incorporating heterojunction and silicon bipolar

Details Power amplifier incorporating heterojunction and silicon bipolar Power amplifier incorporating heterojunction and silicon bipolar

1998-03-23

2000-03-28

Shingleton, Michael B

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

330299, 330300, H03F 304

Patent

active

060437146

ABSTRACT:
A power amplifier including an amplifier stage including a heterojunction bipolar transistor for signal amplification having a base electrode connected to an RF signal input terminal, and a grounded emitter electrode; and a bias circuit including a silicon bipolar transistor having a base electrode connected to a power supply terminal, and a terminal from which a current amplified in response to a base current is output, which terminal is connected to the base electrode of the heterojunction bipolar transistor stage. In this power amplifier, since the voltage required for operating the bias circuit is reduced, a power amplifier capable of operating at a low voltage is realized.

REFERENCES:
patent: 4027271 (1977-05-01), Cave et al.
patent: 4122401 (1978-10-01), Sauer

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