Power amplifier having high heat dissipation

Details Power amplifier having high heat dissipation Power amplifier having high heat dissipation

2005-02-01

2005-02-01

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S613000, C438S122000, C438S235000, C257S778000, C257S737000, C257S738000, C257S183000

Reexamination Certificate

active

06849478

ABSTRACT:
A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.

REFERENCES:
patent: 5349239 (1994-09-01), Sato
patent: 5696466 (1997-12-01), Li
patent: 5793067 (1998-08-01), Miura
patent: 5986324 (1999-11-01), Adlerstein et al.
patent: 1077494 (2001-02-01), None

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