Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Patent
1999-05-24
2000-08-15
Lee, Benny
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
330277, 330302, 333100, H03F 368, H03F 316, H03F 304, H01P 512
Patent
active
061042471
ABSTRACT:
A power amplifier for a radio communication system is provided which includes a divider for equally dividing a received signal into two signals, an amplifier for separately amplifying the divided signals with a same gain, and a combiner for combining the separately amplified signals into one output signal. The divider includes a first FET for equally dividing a signal received at a gate thereof into a signal being output at a drain thereof and a signal being output at a source thereof, a first inductor for coupling the drain of the first FET to a ground, a second inductor for coupling the source of the first FET to the ground, a first capacitor for coupling the drain of the first FET to an input of the first amplifier, and a second capacitor for coupling the source of the first FET to an input of the second amplifier. The amplifier includes at least one first amplifier for amplifying a signal output from the first capacitor, and at least one second amplifier for amplifying a signal output from the second capacitor. The combiner includes a second FET for combining a signal received at a drain thereof from the first amplifier and a signal received at a source thereof from the second amplifier, and outputting the combined signal at a gate thereof, a third inductor for coupling the drain of the second FET to the ground, a fourth inductor for coupling a source of the second FET to the ground, a third capacitor for coupling the drain of the second FET to an output of the first amplifier, and a fourth capacitor for coupling the source of the second FET to an output of the second amplifier.
REFERENCES:
patent: 5274341 (1993-12-01), Sekine et al.
patent: 5793253 (1998-08-01), Kumar et al.
patent: 5955926 (1999-09-01), Uda et al.
Lee Benny
Nguyen Patricia T.
Samsung Electronics Co,. Ltd.
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