Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2005-05-03
2005-05-03
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S787000, C257S790000, C257S723000, C257S685000, C257S690000
Reexamination Certificate
active
06888259
ABSTRACT:
The adhesion between a protective layer, which covers a wiring layer, and a potting material, which covers a microchip, in a hybrid IC is improved without placing an additional material between the protective layer and the potting material. The potting material is separated from other electronic devices on the hybrid IC. To improve adhesion, the surface roughness of the protective layer is increased by adding insulating particles to the protective layer, striking the surface of the protective layer with ceramic particles, or replicating a mesh pattern of a screen mask on the surface of the protective layer. To keep the potting material separated from the other electronic devices, another potting material for covering the electronic devices, which is more viscous than the potting material for covering the microchip, is potted and hardened before the potting material for covering the microchip is potted.
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Ishikawa Takeshi
Nagasaka Takashi
Denso Corporation
Posz Law Group , PLC
Williams Alexander Oscar
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