Potential generation circuit

Details Potential generation circuit Potential generation circuit

1996-12-10

1998-09-29

Zarabia, A.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365226, 327534, G11C 1140

Patent

active

058154469

ABSTRACT:
A potential generating circuit includes at least a pair of MOS transistors each of which is diode-connected and series connected between an output node and a given potential node and disposed in same forward direction. Each MOS transistor has its back gate and a gate interconnected. A capacitor is coupled between a connection node of the pair of MOS transistors and an input node to which an alternating signal is inputted.

REFERENCES:
patent: Re34290 (1993-06-01), Tobita
patent: 3805095 (1974-04-01), Lee et al.
patent: 4559548 (1985-12-01), Iizuka et al.
patent: 4692689 (1987-09-01), Takemae
patent: 4698789 (1987-10-01), Iizuka
patent: 5394365 (1995-02-01), Tsukikawa
patent: 5489870 (1996-02-01), Arakawa
patent: 5644266 (1997-07-01), Chen

Affiliated with

Also associated with

Rating

Potential generation circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Potential generation circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Potential generation circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-692717