Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-16
1997-08-05
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257915, H01L 2994
Patent
active
056545762
ABSTRACT:
A method of manufacturing a code pattern on a semiconductor substrate with an array of substantially parallel buried bit lines integral therewith and with word lines above the buried bit lines, includes: forming a titanium nitride layer above the word lines, forming and patterning a code mask above the titanium nitride layer, implanting impurities into the substrate through openings in the code mask to form the code pattern, and performing rapid thermal annealing of the implant. The step height of the titanium nitride layer is employed to form the code identification on the substrate.
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patent: 5378649 (1995-01-01), Huang
Chung Chen-Hui
Hsue Chen-Chiu
Sheng Yi-Chung
Sheu Shing-Ren
Jackson Jerome
Kelley Nathan K.
United Microelectronics Corporation
Wright William H.
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