Post structure, semiconductor device and light emitting...

Details Post structure, semiconductor device and light emitting... Post structure, semiconductor device and light emitting...

2011-01-11

2011-01-11

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S571000, C257S586000, C257S739000, C257SE21013, C257SE21014

Reexamination Certificate

active

07867885

ABSTRACT:
A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.

REFERENCES:
patent: 4032945 (1977-06-01), Mori et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5674325 (1997-10-01), Albright et al.
patent: 6185238 (2001-02-01), Onomura et al.
patent: 6265289 (2001-07-01), Zheleva et al.
patent: 6291839 (2001-09-01), Lester
patent: 6420732 (2002-07-01), Kung et al.
patent: 6465808 (2002-10-01), Lin
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6500747 (2002-12-01), Lee et al.
patent: 6504180 (2003-01-01), Heremans et al.
patent: 6522063 (2003-02-01), Chen et al.
patent: 6620996 (2003-09-01), Sugawara et al.
patent: 6649437 (2003-11-01), Yang et al.
patent: 6657236 (2003-12-01), Thibeault et al.
patent: 6674778 (2004-01-01), Lin et al.
patent: 6686218 (2004-02-01), Lin et al.
patent: 6762069 (2004-07-01), Huang et al.
patent: 6787383 (2004-09-01), Ikeda et al.
patent: 6797987 (2004-09-01), Chen
patent: 6847057 (2005-01-01), Gardner et al.
patent: 6869820 (2005-03-01), Chen
patent: 6903374 (2005-06-01), Katayama
patent: 6917457 (2005-07-01), Otsuka et al.
patent: 6919944 (2005-07-01), Maeda
patent: 6927444 (2005-08-01), Park et al.
patent: 6946597 (2005-09-01), Sager et al.
patent: 6972438 (2005-12-01), Li et al.
patent: 6977953 (2005-12-01), Hata et al.
patent: 7049635 (2006-05-01), Sano et al.
patent: 7049638 (2006-05-01), Wu et al.
patent: 7187007 (2007-03-01), Kim et al.
patent: 7195993 (2007-03-01), Zheleva et al.
patent: 7244407 (2007-07-01), Chen et al.
patent: 7244957 (2007-07-01), Nakajo et al.
patent: 7250635 (2007-07-01), Lee et al.
patent: 7317212 (2008-01-01), Shin
patent: 7384808 (2008-06-01), Liu et al.
patent: 7385226 (2008-06-01), Ou et al.
patent: 7419912 (2008-09-01), Donofrio
patent: 7422915 (2008-09-01), Chen
patent: 7442964 (2008-10-01), Wierer et al.
patent: 7485897 (2009-02-01), Seong et al.
patent: 7521273 (2009-04-01), Erchak et al.
patent: 7560737 (2009-07-01), Murofushi et al.
patent: 2002/0063256 (2002-05-01), Lin
patent: 2002/0158572 (2002-10-01), Chen et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2002/0195609 (2002-12-01), Yoshitake et al.
patent: 2003/0123003 (2003-07-01), Choi et al.
patent: 2003/0213428 (2003-11-01), Lu et al.
patent: 2004/0084080 (2004-05-01), Sager et al.
patent: 2004/0109666 (2004-06-01), Kim, II
patent: 2004/0170356 (2004-09-01), Iazikov et al.
patent: 2005/0141240 (2005-06-01), Hata et al.
patent: 2005/0145876 (2005-07-01), Kwak et al.
patent: 2005/0145877 (2005-07-01), Erchak
patent: 2005/0161696 (2005-07-01), Yuri
patent: 2005/0173714 (2005-08-01), Lee et al.
patent: 2005/0179130 (2005-08-01), Tanaka et al.
patent: 2005/0194628 (2005-09-01), Kellar et al.
patent: 2005/0199888 (2005-09-01), Seong et al.
patent: 2005/0205883 (2005-09-01), Wierer et al.
patent: 2005/0236636 (2005-10-01), Hon et al.
patent: 2005/0285121 (2005-12-01), Kim, II
patent: 2005/0285132 (2005-12-01), Orita
patent: 2005/0285525 (2005-12-01), Okada et al.
patent: 2006/0027815 (2006-02-01), Wierer et al.
patent: 2006/0124954 (2006-06-01), Akaishi
patent: 2006/0209562 (2006-09-01), Lee et al.
patent: 2006/0234396 (2006-10-01), Tomita et al.
patent: 2006/0272572 (2006-12-01), Uematsu et al.
patent: 2007/0002566 (2007-01-01), Wu et al.
patent: 2007/0008478 (2007-01-01), Lee et al.
patent: 2007/0037306 (2007-02-01), Chen
patent: 2007/0096080 (2007-05-01), Cain et al.
patent: 2007/0115569 (2007-05-01), Tang et al.
patent: 2007/0165160 (2007-07-01), Do et al.
patent: 2007/0170441 (2007-07-01), Takizawa et al.
patent: 2007/0181889 (2007-08-01), Orita
patent: 2007/0205407 (2007-09-01), Matsuo et al.
patent: 2007/0217460 (2007-09-01), Ishibashi et al.
patent: 2007/0258268 (2007-11-01), Kim et al.
patent: 2008/0000522 (2008-01-01), Johnson et al.
patent: 2008/0012005 (2008-01-01), Yang et al.
patent: 2008/0023781 (2008-01-01), Inujima et al.
patent: 2008/0067916 (2008-03-01), Hsu et al.
patent: 2008/0185036 (2008-08-01), Sasaki et al.
patent: 1 562 238 (2005-10-01), None
patent: WO 96/27225 (1996-09-01), None
patent: WO 2006/013698 (2006-02-01), None
Hock et al: “Pattering GaN Microstructures by Polarity-Selective Chemical Etching” Japanese Journal of Applied Physics, Japan Society of Applied Physics, JP LNKD-DOI:10.1143/JJAP.42.1405, vol. 42. No. 12A, Dec. 1, 2003, pp. 1405-1407, XP002991502 Ma et al: “A novel silicon bulk micromachining process for sub-millimetre rectangular waveguide fabrication” ISSN:0021-4922.
Ma et al: “A novel silicon bulk micromachining process for sub-millimetre rectangular waveguide fabrication” Proceedings of the SPIE—The International Society for Optical Engineering SPIE—Int. Soc. Opt. Eng USA, vol. 4407, 2001, pp. 372-379, XP002588488 ISSN: 0277-786X.
Mohan et al: “Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, USLNKD-DOI:10.1063/1.2161576, vol. 88, No. 1, Jan. 5, 2006, pp. 13110-013110, XP012080415 ISSN: 0003-6951.
Motohisa et al: Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE.Physica E Elsevier Netherlands, vol. 23, No. 3-4, Jul. 2004 pp. 298-304, XP002588487 ISSN:1386-9477.

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