Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-11
2007-09-11
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21170, C257SE21470, C438S682000
Reexamination Certificate
active
10985193
ABSTRACT:
Methods (102) are presented for protecting copper structures (26) from corrosion in the fabrication of semiconductor devices (2), wherein a thin semiconductor or copper-semiconductor alloy corrosion protection layer (30) is formed on an exposed surface (26a) of a copper structure (26) prior to performance of metrology operations (206), so as to inhibit corrosion of the copper structure (26). All or a portion of the corrosion protection layer (30) is then removed (214) in forming an opening in an overlying dielectric (44) in a subsequent interconnect layer.
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Borst Christopher Lyle
Eissa Mona
Ramappa Deepak A.
Tsui Ting Y.
Brady III W. James
Everhart Caridad
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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