Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-07-26
2005-07-26
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S763000
Reexamination Certificate
active
06921721
ABSTRACT:
The present invention provides a process of manufacturing a semiconductor device that comprises a process of manufacturing a semiconductor device that includes plasma etching250through a patterned hardmask layer210located over a semiconductor substrate225wherein the plasma etching forms a modified layer210aon the hardmask layer210, and removing at least a substantial portion of the modified layer210aby exposing the modified layer210ato a post plasma clean process.
REFERENCES:
patent: 6032682 (2000-03-01), Verhaverbeke
patent: 6095882 (2000-08-01), Wells et al.
patent: 6287961 (2001-09-01), Liu et al.
patent: 6750117 (2004-06-01), Hung et al.
patent: 2004/0150012 (2004-08-01), Jin et al.
Kirkpatrick Brian K.
Montgomery Clint L.
Pak Randall W.
Trentman Brian M.
Brady III W. James
Dang Phuc T.
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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