Post ion implant photoresist strip using a pattern fill and...

Details Post ion implant photoresist strip using a pattern fill and... Post ion implant photoresist strip using a pattern fill and...

2011-05-24

2011-05-24

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S689000, C438S706000, C438S692000, C257SE21255, C257SE21579

Reexamination Certificate

active

07947605

ABSTRACT:
A method is described for use in a system that removes an implant crust that is formed as an outermost layer of photoresist in a photoresist pattern that is supported by a workpiece. The photoresist pattern defines apertures which lead to an active device region. The active device region is formed by an ion implantation which produces the implant crust. A filler material is applied such that the filler material reaches a fill depth in each aperture. The workpiece and the filler material are exposed to a treatment environment to remove the implant crust on the laterally extending surface of the photoresist as the filler material protects the active device region. Thereafter, a remaining portion of the photoresist layer is removed. An associated intermediate assembly, including the workpiece, is described.

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