Post fabrication processing of semiconductor chips

Details Post fabrication processing of semiconductor chips Post fabrication processing of semiconductor chips

1992-06-15

1994-01-11

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156634, 437183, 437190, 437192, 437246, B44C 122, C23F 100

Patent

active

052777561

ABSTRACT:
A method for for processing semiconductor chips which deters the formation of "tin whiskers" and which removes excess substrate material from the passive side of a semiconductor device is presented. The deterrence of tin whiskers is accomplished by controlling the size of the bead of flowable metal on the conductive bump. The removal of excess material from the passive side of the semiconductor device is accomplished by chemical reaction after the formation of the conductive bump.

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U. Lindborg, "A Model for the Spontaneous Growth of Zinc, Cadmium and Tin Whiskers" Acta Metallurgica, vol. 24, pp. 181-186, Pergamon Press 1976.

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