Post exposure resist bake

Details Post exposure resist bake Post exposure resist bake

2008-07-08

2008-07-08

Vinh, Lan (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C438S530000, C438S708000, C430S326000

Reexamination Certificate

active

07396482

ABSTRACT:
A preferred embodiment of the invention provides a method for forming an integrated circuit. The method comprises forming a resist layer on a substrate. Preferably, the photoresist layer comprises a photo acid generator (PAG). Embodiments include irradiating the resist through a mask to generate a photoacid in the resist, heating the resist at a first temperature, and then heating the resist at a second temperature. Heating at the first temperature evaporates water from the resist. Heating at the second temperature deprotects the resist.

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Hinsberg, W. D., et al., “Chemical and physical aspects of the post-exposure baking process used for positive-tone chemically amplified resists”, IBM J. Res. & Dev., Sep. 2001, pp. 667-682, vol. 45, No. 5.

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