Photocopying – Projection printing and copying cameras
Reexamination Certificate
2002-05-03
2004-10-05
Kim, Peter B. (Department: 2851)
Photocopying
Projection printing and copying cameras
C430S030000, C430S330000
Reexamination Certificate
active
06801295
ABSTRACT:
COPYRIGHT NOTICE
Contained herein is material that is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the United States Patent and Trademark Office patent file or records, but otherwise reserves all rights to the copyright whatsoever. The following notice applies to the software and data as described below and in the drawings hereto: Copyright© 2001, All Rights Reserved.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates generally to the field of semiconductor mask fabrication. More particularly, the invention relates to a system and method for fabricating a mask using a post exposure modification of an exposure image.
2. Background Information
Masks are often used to manufacture semiconductor devices and logic products.
FIG. 1
illustrates an exemplary lithography system
100
that may be used to manufacture semiconductor devices based on a mask
130
. The system
100
includes a radiation source
110
to generate and transmit radiation
120
to the mask
130
. The mask
130
contains a circuitry pattern
140
that creates and transmits a patterned radiation
150
. Typically the patterned radiation
150
is only a portion of the radiation
120
.
The patterned radiation
150
contains circuitry information and is provided to a semiconductor manufacturing process
160
. Typically, the patterned radiation
150
is used to selectively print or expose portions of a resist layer and then subsequent processing is used to manufacture a semiconductor device or logic product based on the exposure.
One prior art problem is that the mask
130
and the pattern
140
may have inaccuracies, errors, or both. The inaccuracies or errors may occur due to a number of factors, such as faulty manufacturing equipment, manufacturing equipment that is not properly calibrated, and other factors. Regardless of the cause, the errors are transferred via the patterned radiation
150
to the semiconductor manufacturing process
160
and are incorporated into the manufactured semiconductor devices. This may result in a larger proportion of semiconductor devices that do not meet specifications, that have degraded performance, or that may fail.
REFERENCES:
patent: 6034771 (2000-03-01), Rangarajan et al.
patent: 6100012 (2000-08-01), Shi
patent: 6100506 (2000-08-01), Colelli, Jr. et al.
patent: 6169274 (2001-01-01), Kulp
patent: 6235439 (2001-05-01), Whiting
Section 2.7 Resists, SPIE Handbook of Microlithography,Micromachining and Microfabrication, vol. 1: Microlithography. [online] [retrieved on Aug. 3, 2001] Retrieved from the Internet <URL:http://www.cnf.cornell.edu/SPIEBook/spie7.htm pp. 1-11.
Negative e-beam resist SAL603-0.45 [online] [retrieved on Aug. 3, 2001] Retrieved from the Internet:<URL:http://www.nanophys.kth.se
anophys/facilities
fl/resists/sal603.html pp. 1-3.
Alexei L. Bogdanov, Use of SU-8 Negative Photoresist for Optical Mask Manufacturing MAX-Lab, University of Lund, SE-221 00, Lund Sweden. [online] pp. 1-11. http://www.maxlab.luy.se/beamlines/bld811.
R.D. Allen, G.M. Wallraff, D.C. Hofer and R.R. Kunz; “Photoresists for 193-nm Lithography”, IBM Journal of Research and Development, vol. 41, No. 1/2-Optical lithgraphy.[online] [retrieved on Jun. 27, 2001] Retrieved from the Internet: <URL:www.research.ibm.com/journal/rd/411/allen.html pp. 1-10.
SPIE vol. 2512; Masumi Arai, Hiroyuki Inomata, Toshiharu Nishimura, Masa-aki Kurihara and Naoya Hayashi; “Application of Chemically Amplified Resists to Photomask Fabrication”. Micro Products Research Laboratory, Micro Products Division, Dai Nippon Printing CO., Ltd., Japan. pp. 74-87.
SPIE vol. 1086, Advances In Resists Technology and Processing.(1989) Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography. James W. Thackcray, George W. Orsula, Edward K. Pavelchek, Dianne Canistro; Shipley Co., Inc., Newton Massachusetts. Leonard E. Bogan Jr., Amanda K. Berry, Karen A. Graziano; Rohm and Hass Co., Inc. Philidelphia Pennsylvania. pp. 34-47.
SPIE vol. 2793; A Chemically Amplified Resist Process For 0.25 u M Generation Photomasks; Mikio Katsumata, Hiroichi Kawahira, Minoru Sugara and Satoru Nozawa. MOS LSI Division, Semiconductor Company, Sony Corporation, Japan. pp. 96-104.
Inomata Hiroyuki
Katada Osamu
Kurihara Masa-aki
Ohfuji Takeshi
Sasaki Shiho
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Kim Peter B.
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