Post etch wafer surface cleaning with liquid meniscus

Details Post etch wafer surface cleaning with liquid meniscus Post etch wafer surface cleaning with liquid meniscus

2006-06-28

2009-10-06

Perrin, Joseph L (Department: 1792)

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C134S028000, C134S034000, C134S902000

Reexamination Certificate

active

07597765

ABSTRACT:
A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.

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