Post-etch treatment system for removing residue on a substrate

Details Post-etch treatment system for removing residue on a substrate Post-etch treatment system for removing residue on a substrate

2006-03-28

2011-11-15

Zervigon, Rudy (Department: 1716)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With plasma generation means remote from processing chamber

C118S728000, C118S7230ER, C118S7230IR, C118S7230ME

Reexamination Certificate

active

08057633

ABSTRACT:
A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.

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Office Action issued Sep. 27, 2010, in Taiwan Patent Application No. 096110399, filed Mar. 26, 2007 (with English-language Translation).

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