Post etch cleaning composition for dual damascene system

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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Details

C510S176000, C510S432000, C510S435000, C438S694000, C257SE21224, C257SE21228

Reexamination Certificate

active

10007134

ABSTRACT:
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.

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