Post contact layer etch back process which prevents precipitate

Details Post contact layer etch back process which prevents precipitate Post contact layer etch back process which prevents precipitate

1995-03-16

1996-09-10

Chea, Thorl

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566341, 1566431, 216107, 216109, H01L 21306

Patent

active

055542549

ABSTRACT:
A process for preventing the formation of precipitates on a substrate surface after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. In one embodiment of the invention, the precursors are removed after etching contact layer by rinsing the substrate in water at about 30.degree. C. for about 10 minutes. In a second embodiment of the invention, the precursors are removed by baking the substrate at a temperature of approximately 120.degree. C. for approximately 180 seconds.

REFERENCES:
patent: 4833099 (1989-05-01), Woo
patent: 5164330 (1992-11-01), Davis et al.
patent: 5227337 (1993-07-01), Kadomura
patent: 5254498 (1993-10-01), Sumi
patent: 5326723 (1994-07-01), Petro et al.
patent: 5434104 (1995-07-01), Cain et al.

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