Post-CMP treating liquid and method for manufacturing...

Details Post-CMP treating liquid and method for manufacturing... Post-CMP treating liquid and method for manufacturing...

2005-02-22

2005-02-22

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C438S697000, C438S700000

Reexamination Certificate

active

06858539

ABSTRACT:
There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.

REFERENCES:
patent: 6165052 (2000-12-01), Yu et al.
patent: 6447695 (2002-09-01), Motonari et al.
patent: 6582761 (2003-06-01), Nishimoto et al.
patent: 6656842 (2003-12-01), Li et al.
patent: 2001-269169 (2000-09-01), None
patent: 2001-15462 (2001-01-01), None

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