Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-05-31
2011-05-31
Lorengo, Jerry (Department: 1731)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C051S298000, C106S003000
Reexamination Certificate
active
07951717
ABSTRACT:
Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
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Kurashima Nobuyuki
Minamihaba Gaku
Tateyama Yoshikuni
Yano Hiroyuki
Abu Ali Shuangyi
Kabushiki Kaisha Toshiba
Lorengo Jerry
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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