Positive resist patterns

Details Positive resist patterns Positive resist patterns

1989-12-29

1991-01-08

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430326, 526245, G03F 7039

Patent

active

049834959

ABSTRACT:
Positive resist patterns prepared by using a derivative of polyacrylic acid esters containing halogen expressed by the following general formula for the resist material; ##STR1## (where A is a structural unit which is derived from monomers having a copolymerable double bond, and X is either a halogen atom or a methyl group. m is a positive integer, n is 0 or a positive integer, n/m is 0 to 2 and m+n are 20 to 20,000. Y.sub.1 to Y.sub.5 are a fluorine or hydrogen atom and at least one of them is a fluorine atom).

REFERENCES:
patent: 3544535 (1970-12-01), Gilbert et al.
patent: 4125072 (1978-11-01), Kakuchi et al.
patent: 4259407 (1981-03-01), Tada et al.
patent: 4822721 (1989-04-01), Tsutsumi et al.

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