Positive resist material

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430326, 430905, 430914, 430925, 430921, G03C 1492

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active

053567536

ABSTRACT:
A positive resists material for high energy-sensitive positive resists which can be developed in aqueous alkali solution, said material comprising (A) a polyhydroxystyrene resin wherein some hydroxyl groups are substituted by t-butoxycarbonyloxy groups, (B) a solution blocking agent, and (C) an onium salt, and being characterized in that said solution blocking agent contains at least one t-butoxycarbonyloxy group per molecule, said onium salt is bis(p-t-butylphenyl) iodinium trifluormethylsulfonate represented by the following formula (1): ##STR1## and the weight proportions of (A), (B), (C) are given by the relations: 0.07.ltoreq.B-.ltoreq.0.40, 0.005.ltoreq.C.ltoreq.0.15, 0.55.ltoreq.A, A+B+C=1. As the resist has low absorption at the exposure wavelength of a KrF exima laser, a fine pattern having vertical walls is easily formed.

REFERENCES:
patent: 5035979 (1991-07-01), Nguyen-Kim et al.
patent: 5204216 (1993-04-01), Kim
L. Schlegel et al, "Determination of acid diffusion in chemical amplification positive deep ultraviolet resists", Journal of Vacuum Science and Technology: Part B, vol. 9, No. 2 (Apr. 1991), pp. 278-289.
A. A. Lamola et al, "Chemically amplified resists", Solid State Technology, vol. 34, No. 8 (Aug. 1991), pp. 53-60.

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