Positive resist composition for immersion lithography and...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S326000, C430S910000

Reexamination Certificate

active

07494762

ABSTRACT:
Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid generator component (B) that generates an acid upon exposure, and a resin component (C) containing a constituent unit (c1) represented by the following Chemical Formula 1:wherein R1is a hydrogen atom or a methyl group; R2and R3are each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n is an integer of 0 to 3; and Z is an aliphatic cyclic group having 4 to 12 carbon atoms, having a fluorine atom and/or a fluorinated alkyl group as a substituent.

REFERENCES:
patent: 5908730 (1999-06-01), Nitta et al.
patent: 6180313 (2001-01-01), Yukawa et al.
patent: 2005/0282985 (2005-12-01), Koyama et al.
patent: 2006/0058480 (2006-03-01), Koyama et al.
patent: 09-208554 (1997-08-01), None
patent: 11-35551 (1999-02-01), None
patent: 11-35552 (1999-02-01), None
patent: 11-35573 (1999-02-01), None
patent: 11-322707 (1999-11-01), None
patent: WO 2004/074242 (2004-09-01), None
Gil et al.,First Microprocessors with Immersion Lithography, Proceedings of SPIE, vol. 5754, 119-128 (2005).
Kodama et al.,Synethsis of Novel Fluoropolymer for 157nm Photoresists by Cyclo-polymerization, Proceedings of SPIE, vol. 4690, 76-83 (2002).

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