Positive resist composition and pattern formation method...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S326000, C430S907000

Reexamination Certificate

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07147987

ABSTRACT:
A positive resist composition comprising (A) a compound that generates an acid upon irradiation of an actinic ray or radiation and (B) a resin having a property of increasing solubility in an alkali developing solution by the action of an acid and including a repeating unit containing a partial structure represented by formula (X) defined in the specification and a repeating unit represented by formula (Y) defined in the specification.

REFERENCES:
patent: 2005/0026074 (2005-02-01), Inabe et al.
patent: 1 319 981 (2003-06-01), None
patent: 2003-82030 (2003-03-01), None
patent: 2003-89708 (2003-03-01), None
patent: WO 00/67072 (2000-11-01), None
Takuya Hagiwara et al., “Characterization of Fluoropolymer Resist for 157 -nm Lithography” (2003), Journal of Photopolymer Science and Technology, vol. 16, No. 4, pp. 567-613.
Kyle Patterson et al., “Polymers for 157 nm Photoresist Applications: A Progress Report” (2000), Advances in Resist Technology and Processing XVII, vol. 3999, pp. 365-374.
Seiichi Ishikawa et al., “Performances of Resists for 157-nm Lithography Based on Monocyclic Fluoropolymers”, (2003) vol., 5039, No. 1, pp. 580-588.
Iqbal Sharif et al., “Advances in TFE Based Fluoropolymers for 157nm Lithography: A Progress Report”, (2003) vol. 5039, No. 1, pp. 33-42.
European Search Report dated Dec. 27, 2004.

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