Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2007-01-02
2007-01-02
Lee, Sin (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S326000, C430S907000, C430S914000, C430S910000
Reexamination Certificate
active
10897122
ABSTRACT:
A positive resist composition comprising (A) a resin containing at least one group that is decomposed by the action of an acid to generate an alkali-soluble group and (B) at least two compounds selected from (B1) a compound that generates an aliphatic or aromatic sulfonic acid substituted with at least one fluorine atom, (B2) a compound that generates an aliphatic or aromatic sulfonic acid that does not contain a fluorine atom, (B3) a compound that generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom and (B4) a compound that generates an aliphatic or aromatic carboxylic acid that does not contain a fluorine atom, as (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, wherein the group that is decomposed by the action of an acid contained in the resin (A) includes a group represented by formula (Y) defined in the specification.
REFERENCES:
patent: 6939662 (2005-09-01), Mizutani et al.
patent: 2003/0232277 (2003-12-01), Sasaki et al.
patent: 1 319 981 (2003-06-01), None
patent: 1 367 440 (2003-12-01), None
patent: WO 02/33489 (2002-04-01), None
patent: WO 02/092651 (2002-11-01), None
R. R. Kunz et al., “Outlook for 157-nm resist desig”, (1999) Proc. SPIE., vol. 3678, pp. 13-23.
Dirk Schmaljoham et al., “Design Strategies for 157 nm Single-Layer Photoresists: Lithographic Evaluation of a Poly(@-trifluoromethyl vinyl alcohol) Copolymer” (2000) Proc. SPIE., vol. 3999, pp. 330-335.
Michael K. Crawford et al., “New Materials for 157 nm Photoresists: Characterization and Properties” (2000), Proc. SPIE., vol. 3999, pp. 357-363.
Patterson et al., “Polymers for nm Photoresist Applications: A Progress Report” (2000), Proc. SPIE., vol. 3999, pp. 365-374.
Inabe Haruki
Sasaki Tomoya
Fuji Photo Film Co. , Ltd.
Lee Sin
Sughrue & Mion, PLLC
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