Positive photoresist composition and method for forming...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S905000, C430S910000

Reexamination Certificate

active

07449276

ABSTRACT:
The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.

REFERENCES:
patent: 6033828 (2000-03-01), Shimada et al.
patent: 6239231 (2001-05-01), Fujishima et al.
patent: 6228552 (2001-09-01), Palmgren
patent: 6495306 (2002-12-01), Uetani et al.
patent: 6495307 (2002-12-01), Uetani et al.
patent: 6511785 (2003-01-01), Takemura et al.
patent: 6511794 (2003-01-01), Furukawa
patent: 6579657 (2003-06-01), Ishibashi et al.
patent: 6593056 (2003-07-01), Takeda et al.
patent: 6627381 (2003-09-01), Uetani et al.
patent: 6630282 (2003-10-01), Oomori et al.
patent: 6787282 (2004-09-01), Sato
patent: 6949329 (2005-09-01), Endo et al.
patent: 6953651 (2005-10-01), Namba et al.
patent: 7312014 (2007-12-01), Maesawa et al.
patent: 2001/0044070 (2001-11-01), Uetani et al.
patent: 2002/0068238 (2002-06-01), Hada et al.
patent: 2003/0113661 (2003-06-01), Uetani et al.
patent: 2003/0232273 (2003-12-01), Adams et al.
patent: 2004/0033438 (2004-02-01), Hamada et al.
patent: 2005/0031984 (2005-02-01), Takata et al.
patent: 2005/0042541 (2005-02-01), Hagihara et al.
patent: 2006/0240355 (2006-10-01), Ando
patent: 2006/0247346 (2006-11-01), Hojo et al.
patent: 2006/0251986 (2006-11-01), Sato et al.
patent: 1357428 (2003-10-01), None
patent: 2356258 (2001-05-01), None
patent: 08-254820 (1996-10-01), None
patent: H10-142799 (1998-05-01), None
patent: 10-268508 (1998-10-01), None
patent: 11-002902 (1999-01-01), None
patent: H11-109631 (1999-04-01), None
patent: H11-119443 (1999-04-01), None
patent: 2000-26535 (2000-01-01), None
patent: 2000-214587 (2000-08-01), None
patent: 2001-056558 (2001-02-01), None
patent: 2001-142199 (2001-05-01), None
patent: 2001-168478 (2001-06-01), None
patent: 2001-274062 (2001-10-01), None
patent: 2002-6501 (2002-01-01), None
patent: 2002-062655 (2002-02-01), None
patent: 2002-062656 (2002-02-01), None
patent: 2002-169292 (2002-06-01), None
patent: 2002-241442 (2002-08-01), None
patent: 2002-323768 (2002-11-01), None
patent: 2003-075998 (2003-03-01), None
patent: 2003-107707 (2003-04-01), None
patent: 2003-107710 (2003-04-01), None
patent: 2003-295444 (2003-10-01), None
patent: 2003-321520 (2003-11-01), None
patent: 2004-078153 (2004-03-01), None
patent: 2004-333549 (2004-11-01), None
patent: WO 00/46640 (2000-08-01), None
patent: WO 01/73512 (2001-04-01), None
patent: WO 03/007079 (2003-01-01), None
International Search Report from priority PCT application serial No. PCT/JP 2004/005804.
Office Action dated Nov. 29, 2006 for the counterpart Korean Patent Application No. 10-2005-7019928.
Office Action issued on Jul. 1, 2008, on the Japanese Patent Application No. 2004-142581.
Nakamura et al., “Ultra Thin Film Resists for Low Energy E-beam Projection Lithography”, Journal of Photopolymer Science and Technology, vol. 15, No. 3, pp. 417-422, (2002).
Yoshizawa et al., “Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation method”, Journal of Vacuum Science and Technology B, Vol. 19, Issue 6, pp. 2488-2493, (2001).
Office Action Issued on Feb. 19, 2008, on the Japanese Patent Application No. 2003-334029.
Office Action Issued on Feb. 19, 2008, on the Japanese Patent Application No. 2003-347136.

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