Positive o-quinone diazide photoresist containing base copolymer

Details Positive o-quinone diazide photoresist containing base copolymer Positive o-quinone diazide photoresist containing base copolymer

1993-05-10

1994-11-01

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430193, 430313, 430326, 430331, 106

Patent

active

053606930

ABSTRACT:
An aqueous-alkaline developable photoresist suitable for a lithography in deep ultraviolet light and having a structural resolution in the sub-.mu.m range. The photoresist contains a developable base polymer that comprises anhydride functions that act as solubility-mediating groups and also contains a photo-active component. In addition to being constructed of monomers carrying anhydride groups, the base polymer can be constructed of further monomers that produce designationally defined properties in the photoresist, for example, exhibit resistance to plasma etching processes. The photoresist of the present invention is therefore very versatile.

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patent: 4791176 (1988-12-01), Birkle et al.
Moss et al, Plasma Oxidation of Polymers, Plasma Chemistry and Plasma Processing 6 (1986) Dec., No. 4, Bristol, Gr. Britain, pp. 401-415.
Moreau, Shelf Life Extender for Polymeric Material, IBM Technical Disclosure Bulletin, vol. 23, No. 7B, Dec. 1980, p. 3203.
Osuch et al, A New Class of Resins for Deep Ultraviolet Photoresists, SPIE, vol. 631, Advances in Resist Technology and Processing III (1986), p. 68-75.
Pampalone, Novolac Resins Used in Positive Resist Systems, Solid State Technology, Jun. 1984, pp. 115-120.
Patent Abstracts of Japan, vol. 10, No. 154 (P463) [2210], Jun. 4, 1986.

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