Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1995-05-25
1997-05-13
Young, Christopher G.
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430192, 430193, 430296, G03F 7023, G03C 161
Patent
active
056291272
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a positive electron beam resist composition used for producing masks for photolithography, semiconductor integrated circuits, etc. by using electron beam lithography, and a developer for the positive electron beam resist.
BACKGROUND TECHNIQUES
Conventionally used positive electron beam resists are mainly composed of a polymer such as polymethyl methacrylate, poly(2,2,2-trifluoroethyl .alpha.-chloroacrylate) or poly(1-butenesulfone). However, these resists are disadvantageously poor in dry etching resistance. In recent years, dry etching is increasingly used in the production of photomasks, semiconductor integrated circuits, etc., and these conventional resists cannot be used satisfactorily in more cases.
On the contrary, positive photoresists mainly composed of a novolak resin and a quinonediazide compound (e.g., Japanese Patent Laid-Open (Kokai) Nos. 63-115162, 3-251845 and 4-12357) are excellent in dry etching resistance and in addition, can be developed by a non-swelling alkali aqueous solution, hence being excellent in resolution and pattern form advantageously. However, they are unpractically extremely low in sensitivity when used for electron beam lithography.
An object of the present invention is to present a positive electron beam resist composition mainly composed of a novolak resin and a quinonediazide compound, excellent in dry etching resistance and resolution and high in sensitivity.
Another object of the present invention is to present a method for forming a fine pattern specifically high in sensitivity, accurately rectangular in form and higher in resolution by using the positive electron beam resist composition.
DISCLOSURE OF THE INVENTION
The present invention can provide a positive electron beam resist composition mainly composed of a novolak and a quinonediazide excellent in dry etching resistance and resolution, and the composition can be used to obtain a fine pattern at high sensitivity especially if the developer of the present invention is used.
THE BEST EMBODIMENT FOR EXECUTION OF THE INVENTION
The inventors studied the resists mainly composed of a novolak resin and a quinonediazide compound, and the processes for them, and as a result, found that if a resist optimized in material and composition is developed by a developer with a specific composition, high sensitivity not achieved by applying any of the conventional photoresists can be achieved.
The positive electron beam resist composition of the present invention comprises (1) a cresolnovolak resin, (2) at least one additive selected from a group consisting of compounds represented by the following general formulae (I) and (II): ##STR1## (where R.sup.1, R.sup.2 and R.sup.3 independently represent a hydrogen atom, an alkyl group, an aralkyl group or an aryl R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 independently represent a hydrogen atom, a halogen atom, a hydroxyl group and an alkyl group; m is an integer from 0 to 3; and n is an integer from 0 to 1.) ##STR2## (where X stands for ##STR3## and R stands for an alkyl group or aralkyl group.) and (3) the quinonediazide compound obtained by letting methyl gallate and 1,2-naphthoquinonediazido-4-sulfonyl chloride react with each other, as main ingredients, where the amount of the additive (2) is 5 to 20 wt % based on the weight of the resist solid; the amount of the quinonediazide compound (3) is 10 to 20 wt % based on the weight of the resist solid; and the triester content in the quinonediazide compound (3) is 30 to 55 wt %.
The cresolnovolak resin used in the positive electron beam composition of the present invention can be obtained, for example, by condensing a cresol, preferably a mixture of p-cresol and m-cresol and formaldehyde or paraformaldehyde as a formaldehyde polymer or 1,3,5-trioxane.
The condensation reaction can be effected without any solvent or in an organic solvent. The organic solvent can be preferably selected from alcohols such as methanol, ethanol, 1-propanol, 2-propanol
Asano Masaya
Kanetsuki Shigeyoshi
Kataoka, deceased Mutsuo
Kataoka, legal representative Mayumi
Oosedo Hiroki
Miller Austin R.
Toray Industries Inc.
Young Christopher G.
LandOfFree
Positive electron beam resist composition containing cresolnovol does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Positive electron beam resist composition containing cresolnovol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Positive electron beam resist composition containing cresolnovol will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1384147