Positive and negative dual function magnetic resist lithography

Details Positive and negative dual function magnetic resist lithography Positive and negative dual function magnetic resist lithography

2006-07-21

2009-10-06

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S322000, C430S296000, C430S330000, C430S270100

Reexamination Certificate

active

07598022

ABSTRACT:
The present invention discloses a positive and negative dual function magnetic resist lithography method. At first, a substrate coated with a positive and negative dual function magnetic resist layer is provided. The positive and negative dual function magnetic resist layer comprises a manganese(Mn)-containing precursor and at least one hydrophilic polymer. Next, at least one exposure procedure for the positive and negative dual function magnetic resist layer is performed to form either a positive resist or a negative resist. In addition, after the at least one exposure procedure, a developing procedure using water-soluble developer is performed.

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Chen et al., “Mechanism and Modeling of Ring Pattern Formation for Electron Beam Exposure on Zwitterresist” Jp. J. Appl. Phys. vol. 42 (2003) pp. 3838-3841, Part I, No. 6B, Jun. 2003.

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