Positive acting bilayer photoresist development

Details Positive acting bilayer photoresist development Positive acting bilayer photoresist development

1986-05-07

1989-02-21

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430156, 430326, 430331, G03F 726

Patent

active

048064530

ABSTRACT:
The invention is for a developer for a bilayer photoresist film comprising a first relatively thick layer of a polyglutarimide and a second relatively thin layer of a diazo sensitized novolak resin. The developer is an aqueous solution of a tetra alkyl ammonium hydroxide where at least two of the alkyl groups have two or more carbon atoms. The developer of the invention permits development of the bottom resist layer without erosion of the top resist layer.

REFERENCES:
patent: 4211834 (1980-07-01), Lapadula
patent: 4411981 (1983-10-01), Minezaki
patent: 4423138 (1983-12-01), Guild
patent: 4524121 (1985-06-01), Gleim et al.

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