Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2006-04-27
2008-12-16
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S213000, C257S329000, C257SE21404, C438S142000, C438S197000, C438S268000, C438S299000
Reexamination Certificate
active
07465953
ABSTRACT:
The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion, at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers, one or more nanoparticles attracted to and in contact with the at least one monolayer, and at least one tunneling barrier in contact with the one or more nanoparticles. Typically, the single electron structure or device formed therefrom further comprise a drain, a gate and a source to provide single electron behavior, wherein there is a defined gap between source and drain and the one or more nanoparticles is positioned between the source and drain.
REFERENCES:
patent: 6984845 (2006-01-01), Khang
Subramanian, L-C. Ma, et al., “Fabrication of One-Dimensional Assemblies of Nanoparticles in a Wafer Scale,” JSPS-UNT Joint Symposium on Nanoscale Materials for Optoelectronics and Biotechnology, University of North Texas, Feb. 2006.
Koh, S.J., “Controlled Positioning of Nanoparticles in a Wafer-Level,” TMS Annual Meeting, San Antonio, TX, Mar. 2006.
Ma, L.-C, et al., “Wafer-Level Positioning of Nanoparticles using CMOS Technology and Wet Chemistry,” Materials Research Society Spring Meeting, San Francisco, CA, Apr. 2006.
Kim Choong-Un
Koh Seong Jin
Ma Liang-Chieh
Subramanian Ramkumar
Board of Regents , The University of Texas System
Gardere Wynne & Sewell LLP
Pert Evan
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