Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2008-04-29
2008-04-29
Deo, Duy-Vu N (Department: 1792)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S778000, C438S780000
Reexamination Certificate
active
07365023
ABSTRACT:
There is provided an underlayer coating causing no intermixing with photoresist layer and having a high dry etching rate compared with photoresist, which is used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for forming a porous underlayer coating for use in manufacture of semiconductor device, comprising a blowing agent, an organic material and a solvent, or a polymer having a blowing group and a solvent. The underlayer coating formed from the composition has porous structure which has pores therein, and makes possible to attain a high dry etching rate.
REFERENCES:
patent: 5693691 (1997-12-01), Flaim et al.
patent: 5919599 (1999-07-01), Meador et al.
patent: 6791649 (2004-09-01), Nakamura et al.
patent: 6803168 (2004-10-01), Padmanaban et al.
patent: 2001/0021726 (2001-09-01), Brown
patent: 2002/0018886 (2002-02-01), Matsufuji et al.
patent: 2002/0172896 (2002-11-01), Adams et al.
patent: 2003/0207208 (2003-11-01), Uenishi
patent: A 2000-512402 (2000-09-01), None
patent: A 2000-294504 (2000-10-01), None
patent: A 2001-272506 (2001-10-01), None
patent: A 2002-47430 (2002-02-01), None
patent: A 2002-128847 (2002-05-01), None
patent: A 2002-190519 (2002-07-01), None
patent: A 2002-207295 (2002-07-01), None
patent: A 2002-207296 (2002-07-01), None
patent: 2002-081328 (2003-02-01), None
patent: A 2003-57828 (2003-02-01), None
Lynch et al., “Properties and Performance of Near UV Reflectivity Control Layers,” SPIE vol. 2195, pp. 225-229, 1994.
Taylor et al., “Methacrylate Resists and Antireflective Coatins for 193 nm Lithography,” SPIE vol. 3678, pp. 174-185, Mar. 1999.
Meador et al., “Recent Progress in 193 nm Antireflective Coatings,” SPIE vol. 3678, pp. 800-809, Mar. 1999.
Sakaida Yasushi
Takei Satoshi
Deo Duy-Vu N
Nissan Chemical Industries Ltd.
Oliff & Berridg,e PLC
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