Porous silicon trench and capacitor structures

Details Porous silicon trench and capacitor structures Porous silicon trench and capacitor structures

1994-10-28

1996-04-16

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257305, 257309, H01L 27108, H01L 2976

Patent

active

055085423

ABSTRACT:
The invention provides a capacitor structure utilizing porous silicon as a first plate of the capacitor structure, thereby greatly increasing the surface area available for the capacitor and thereby the capacitance attainable. The invention also provides a trench structure having a porous silicon region surrounding the sidewalks thereof. Such a trench can then be utilized to totem a capacitor according to the subject invention. Methods of producing the capacitor and trench structures according to the subject invention are also provided. Porous silicon is produced utilizing electrolytic anodic etching.

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M. R. Poponiak and T. H. Yeh, IBM Technical Disclosure Bulletin 20(8) :3074-3075 (1978).
Watanabe et al., A Novel Stacked Capacitor With Porous-Si Electrodes for High Density DRAMS, Symposium on VLSI Tech., p. 17, May 17, 1993.

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