Porous silicon nitride semiconductor dopant carriers

Details Porous silicon nitride semiconductor dopant carriers Porous silicon nitride semiconductor dopant carriers

1983-06-08

1986-06-24

Morgenstern, Norman

Coating processes

Foraminous product produced

148189, 252951, B05D 500

Patent

active

045967164

ABSTRACT:
New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopants, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant reaction sintered Si.sub.3 N.sub.4 carrier material.

REFERENCES:
patent: 3839540 (1974-10-01), Arrol
patent: 3849344 (1974-11-01), McMartry et al.
patent: 3923563 (1975-12-01), Venkata

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