Porous silicon dioxide insulator

Details Porous silicon dioxide insulator Porous silicon dioxide insulator

1998-08-24

2000-12-19

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257296, 438960, H01L 27108

Patent

active

061630667

ABSTRACT:
A porous silicon dioxide insulator having a low relative dielectric constant of about 2.0 or less is formed from a silicon carbide base layer. Initially, at least one layer of silicon carbide is deposited on a semiconductor substrate. The silicon carbide layer is then etched to form a porous silicon carbide layer, which is oxidized to produce the final porous silicon dioxide layer.

REFERENCES:
patent: 5165283 (1992-11-01), Kurtz et al.
patent: 5286565 (1994-02-01), Holzl et al.
patent: 5298767 (1994-03-01), Shor et al.
patent: 5454915 (1995-10-01), Shor et al.
patent: 5472913 (1995-12-01), Havemann et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5569932 (1996-10-01), Shor et al.
patent: 5597738 (1997-01-01), Kurtz et al.
patent: 5885871 (1999-03-01), Chan et al.
J.M. Agullo et al., "Graduated Si.sub.x C.sub.1.multidot.X Ceramic Thin Films Deposited By Thermal Decomposition of Hydrocarbons and Tetraethylsilane", Advances in Inorganic Films and Coatings, 199-205 (1995).
M.B. Anand et al., "NURA: A feasible, Gas-Dielectric Interconnect Process", 1996 Symposium on VSLI Technology Digest of Technical Pacers, 82-83 (1996).
P. Friedrichs et al., "Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC", J. Appl. Phys., 79(10), 7814-7819 (1996).
E.M. Goldstein, "Methods for improving the oxidation resistance of graphite", Carbon, 6(2), 223 (1968).
R. Maury et al., "Chemical vapor co-deposition of C and SiC at moderate temperature for the synthesis of compositionally modulated Si.sub.x C.sub.1-x ceramic layers", Surface and Coatings Technology, 76(1-3), 119-125 (1995).
C.S. Patuwathavithane et al., "Oxidation Studies for 6H-SiC", Prox. 4.sup.th Int. Conf. Amorphous and Crystalline Silicon Carbide163-169 (1992).
Powell et al., "Growth and Characterization of Cubic SiC single-Crystal Films on Si", Journal of the Electrochemical Society, 134(6), 1555-1565 (1987).
J.M. Powers et al., "The surface oxidation of alpha-silicon carbide by O.sub.2 from 300 to 1373 K", Surface Science, 244(1-2), 39-50 (1991).
Mimura et al., "Light Emitting Devices Using Porous Silicon and Porous Silicon Carbide", Solid-State Electronics, 40, 501-504 (1996).
C.E. Ramberg et al., "Oxidation Behavior of CVD and Single Crystal SiC at 1100.degree. C", J. Electrochem. Soc., 142(11), L214-L216 (1995).
J.E. Song et al., "Thermal Oxidation of 6H-Silicon Carbide", Korean Phys. Soc. Ungyong Mulli, 8(4), 346-350 (1995).
J. Togo et al., "A Gate-side Air-gap Structure (GAS) to Reduce the Par.sub.-- Capacitance in MOSFETs", 1996 Symposium on VLSI Technology Digest of Technical Papers, 38-39 (1996).
Danishevskii et al., "Intense photoluminescence of porous layers of SiC films grown on silicon substrates", Semiconductors, 31:354-358 (1997).
Gherasim-Vrsinceanu et al., "On Porosity and Pore Size Distribution of Macroporous Silicon Layers by Scanning Electron Microscopy Investigation", IEEE, 181-182, 184 (1997).
K. Jayaraj et al., "Low dielectric constant microcellular foams," 7.sup.th Dupont Symp. on Polyimids in Microelectronics,p. 29 (1996).
Jessensky et al., "Microstructure and photoluinescence of electronchemically etched porous SiC", Thin Solid Films, 297:224-228 (1997).
Jung et al., "Developments in Luminescent Porous Si", J. Electrochem. Soc., 140:3046-3064 (1993).
van de Lagemaat et al., "Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching", Appl. Phys. Lett.69:2246-2248 (1998).
R. D. Miller et al., Low dielectric constant polyimides and polyimides and polyimide nanofams, 7.sup.th DuPont Symp. On Polyimides in Microelectronics, pp. 26-27 (1996).
Mimura et al., "Blue electroluminescence from porous silicon carbide", Appl. Phys. Lett.,65:3350-3352 (1994).
Shor et al., "Direct observation of porous SiC formed by anodization in HF", Appl. Phys. Lett., 62-:2836-2838 (1993).
Smith et al., "Porous Silicon formation mechanism", J. Appl. Phys., 71:R1-R22 (1992).

Affiliated with

Also associated with

Rating

Porous silicon dioxide insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Porous silicon dioxide insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous silicon dioxide insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-273144