Fishing – trapping – and vermin destroying
Patent
1995-06-07
1998-03-03
Bowers, Jr., Charles L.
Fishing, trapping, and vermin destroying
437778, 437787, 437790, 437781, H01L 21316
Patent
active
057233683
ABSTRACT:
This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.
REFERENCES:
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4764248 (1988-08-01), Bhattacherjee et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5155576 (1992-10-01), Mizushima
patent: 5393712 (1995-02-01), Rostoker et al.
patent: 5405805 (1995-04-01), Homma
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5489553 (1996-02-01), Chen
Cho Chi-Chen
Gnade Bruce E.
Smith Douglas M.
Bowers Jr. Charles L.
Donaldson Richard L.
Harris James E.
Stoltz Richard A.
Whipple Matthew
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