Porous dielectric material with improved pore surface properties

Details Porous dielectric material with improved pore surface properties Porous dielectric material with improved pore surface properties

1994-06-23

1996-04-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437238, H01L 21324

Patent

active

055040420

ABSTRACT:
This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.

REFERENCES:
patent: 4608316 (1986-08-01), Toda et al.
patent: 5302548 (1994-04-01), Watanabe et al.
Fricke et al., "Aerogels", May 28, 1992, J. Am. Seram. Soc. 75(8) pp. 2027-2036.

Affiliated with

Also associated with

Rating

Porous dielectric material with improved pore surface properties does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Porous dielectric material with improved pore surface properties, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous dielectric material with improved pore surface properties will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2016210