Porous dielectric material with improved pore surface properties

Details Porous dielectric material with improved pore surface properties Porous dielectric material with improved pore surface properties

1995-06-07

1996-06-04

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257637, 257638, 257642, 257643, 257758, 257759, 257765, H01L 2358, H01L 2940

Patent

active

055236154

ABSTRACT:
This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for sample, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.

REFERENCES:
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5155576 (1992-10-01), Mizushima
Hrubesh et al., "Dielectric Properties of Aerogels", J. Mater. Res., vol. 8,No. 7, Jul. 1993, pp. 1736-1741.

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