Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-08-14
2007-08-14
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S478000, C438S482000, C438S483000, C438S500000, C438S502000, C438S795000, C438S796000, C257SE21011, C257SE21013
Reexamination Certificate
active
11133282
ABSTRACT:
It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present invention relates to a porous body having a network structure skeleton wherein 1) the aforementioned skeleton is composed of an inner part and a surface part, 2) the aforementioned inner part is substantially made of carbon material, and 3) all or part of the aforementioned surface part is an oxide semiconductor, and to a manufacturing method therefor.
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Morinaga Yasunori
Sasaki Hidehiro
Suzuki Masa-aki
Suzuki Nobuyasu
Yamada Yuka
Lebentritt Michael
Lee Kyoung
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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