Polysulfone barrier layer for bi-level photoresists

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430326, 430328, 430156, 430166, 430325, G03C 152, G03C 168, G03C 186, G03C 194

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048350869

ABSTRACT:
A photosensitive article which comprises a substrate, a first light sensitive layer on the substrate, a polysulfone layer and a second light sensitive layer. The first light sensitive layer preferably comprises a depolymerizable polymethyl methacrylate polymer and the second light sensitive layer preferably comprises on o-quinone diazide in admixture with a water insoluble, aqueous alkaline soluble binder resin.

REFERENCES:
patent: 4011351 (1977-03-01), Gipstein et al.
patent: 4024305 (1977-05-01), Alpaugh et al.
patent: 4087569 (1978-05-01), Hatzakis et al.
patent: 4156745 (1979-05-01), Hatzakis et al.
patent: 4211834 (1980-07-01), Lapadula et al.
patent: 4217407 (1980-08-01), Watanabe et al.
patent: 4272561 (1981-06-01), Rothman et al.
patent: 4289845 (1981-09-01), Bowden et al.
patent: 4396458 (1983-08-01), Platter et al.
patent: 4456675 (1984-06-01), Anderson, Jr. et al.
patent: 4519872 (1985-05-01), Anderson, Jr. et al.
patent: 4599243 (1986-07-01), Sachdev et al.
patent: 4745042 (1988-05-01), Sasago et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 11, Apr. 1984, p. 6141.

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