Polystyrene-tetrathiafulvalene polymers as deep-ultraviolet mask

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430296, 430394, 430503, 430287, 430325, 430326, 430328, 430942, 430967, G03C 516

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045433194

ABSTRACT:
A method is provided for providing a polystyrene-tetrathiafulvalene (PSTTF)/deep-ultraviolet hydrid system which combines the advantages of E-beam or X-ray lithography systems with those of deep-UV conformable printing to produce low bias, high aspect ratio resist images over the topography of microelectronic devices.

REFERENCES:
patent: 4142783 (1979-03-01), Engler et al.
patent: 4247622 (1981-01-01), Aviram
E. Bassous et al., "Acridine and Acridine Derivatives in Photoresist: Application as Deep UV Mask Materials for High Resolution Micro-Lithography", IBM Technical Disclosure Bulletin, vol. 23, No. 7B, Dec. 1980, pp. 3387-3390.
B. J. Lin, "Portable Intimately Contacted Mask", IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978, p. 2133.
B. J. Lin et al., "Practicing the Novolac Deep-UV Portable Conformable Masking Technique", Journal of Vaccuum Science and Technology, vol. 19, No. 4, Nov./Dec. 1981, pp. 1313-1319.
D. C. Green and F. B. Kaufman, IBM Technical Disclosure Bulletin, vol. 20, No. 7, Dec. 1977, pp. 2865-2867, 2862-2864.
Donald C. Hofer, Frank B. Kaufman, Steven R. Kramer and Ari Aviram, Applied Physics Letters, vol. 37, No. 3, Aug. 1980, pp. 314-316.

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