Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1986-07-11
1991-01-01
Michl, Paul R.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430311, 430325, 430270, 430313, 430327, 430296, G03C 171, G03C 500
Patent
active
049817787
ABSTRACT:
A method for providing a high temperature imaging resist layer for use in a multilayer resist system. A relatively thick planarizing resist layer is coated onto a suitable substrate to provide a planarizing resist layer having a planar surface. A relatively thin layer of a solvent soluble polysilsesquioxane polymer resist is applied to the planar surface to form an imaging resist which remains solvent soluble at temperatures up to 250.degree. C. The hydroxyl or alkoxy content of the polysilsesquioxane must be 0.05 weight percent or less in order to prevent cross linking of the polysilsesquioxane. The polysiloxane polymer resist is prepared by hydrolizing and polymerizing trichlorosilanes having the formula RSiCl.sub.3 where R is methyl, phenyl, vinyl, n-butyl, t-butyl, chlorophenyl, or chloromethyl-phenyl. The hydroxyl content of the polysilsesquioxane is reduced to 0.05 weight percent by capping the polymer with monoreactive silanes. The polysiloxane imaging resist is designed for use in high temperature electron beam and ion beam lithography.
REFERENCES:
patent: 4507384 (1985-03-01), Morita et al.
patent: 4600685 (1986-07-01), Kitakohji et al.
T. S. Vasileva et al., "Influence of the condition of continuous hydrolysis of methyl trichlorosilane on the composition of the reaction products"; International Polymer Science and Technology, vol. 8, No. 9, 1981, Shurasbyry, (Great Britain), pp. T51-T53.
Patent Abstracts of Japan, vol. 6, No. 245, (P-159) (1123), Dec. 3, 1982, Corresponding to Japanese Kokai 57-14162(A), printed Feb. 9; Sep. 2, 1982.
G. H. Wagner et al. "Reactions of Vinyltrichlorosilane and Vinyltriethoxysilane"; Industrial and Engineering Chemistry, vol. 45, No. 2, 1953, pp. 367-374.
E. D. Roberts, "The Preparation and Properties of a Polysiloxane Electron Resist", Journal of the Electrochemical Society, Dec. 1973, vol. 120, No. 12, pp. 1716-1721.
S. J. Gillespie, "Shaped Siloxane Process"; Technical Disclosure Bulletin; vol. 26, No. 7B, Dec. 1983, pp. 3965-3966.
Arthur J. Barry et al., "Crystalline Organosilsesquioxanes", Journal of American Chemical Society, vol. 77, Aug. 20, 1955; pp. 4248-4252.
John F. Brown, Jr. et al., "Preparation and Characterization of the Lower Equilibrated Phenylsilsesquioxanes", Journal of American Chemical Society, vol. 86, pp. 1120-1125 (Mar. 1964).
Andrianov et al. "Synthesis of Methylphenylsilsesquioxanes", Iz. Akad. Nauk. SSSR, Ser. Khim, No. 6, (Jun. 1967), pp. 1339-1340.
Denson-Low Wanda K.
Hamilton Cynthia
Hughes Aircraft Company
Karambelas A. W.
Michl Paul R.
LandOfFree
Polysiloxane, resist for ion beam and electron beam lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polysiloxane, resist for ion beam and electron beam lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysiloxane, resist for ion beam and electron beam lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1995757