Polysilicon thin film transistors with laser-induced solid phase

Details Polysilicon thin film transistors with laser-induced solid phase Polysilicon thin film transistors with laser-induced solid phase

1997-07-31

1999-08-31

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438162, H01L 21268

Patent

active

059465620

ABSTRACT:
Polysilicon thin film transistors (TFTs) are formed on glass substrates by selectively etching a dielectric layer to expose portions of an amorphous silicon layer in areas of the substrate occupied by the thin film transistor forming a metal seed layer over the exposed portions of the amorphous silicon layer; and selectively annealing the exposed areas with a laser beam to transform the amorphous silicon layer to a polysilicon layer.

REFERENCES:
patent: 4358326 (1982-11-01), Doo
patent: 4670088 (1987-06-01), Tsaur et al.
patent: 5231297 (1993-07-01), Nakayama et al.
patent: 5290712 (1994-03-01), Sato et al.
patent: 5318919 (1994-06-01), Noguchi et al.
patent: 5344796 (1994-09-01), Shin et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5424230 (1995-06-01), Wakai
patent: 5444302 (1995-08-01), Nakajima et al.
patent: 5470619 (1995-11-01), Ahn et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5498904 (1996-03-01), Harata et al.
patent: 5531182 (1996-07-01), Yonehara
patent: 5639698 (1997-06-01), Yamzaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5773329 (1998-06-01), Kuo

Affiliated with

Also associated with

Rating

Polysilicon thin film transistors with laser-induced solid phase does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polysilicon thin film transistors with laser-induced solid phase, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon thin film transistors with laser-induced solid phase will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2428660