Polysilicon thin film transistor and method of forming the same

Details Polysilicon thin film transistor and method of forming the same Polysilicon thin film transistor and method of forming the same

2005-11-01

2005-11-01

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000, C257S635000, C257S638000, C257S640000

Reexamination Certificate

active

06960809

ABSTRACT:
A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, an ion implantation of the poly-island layer is carried out to form a source/drain region in the poly-island layer outside the channel region. An oxide layer and a silicon nitride layer, together serving as an inter-layer dielectric layer, are sequentially formed over the substrate. Thickness of the oxide layer is thicker than or the same as (thickness of the nitride layer multiplied by 9000 Å)1/2and maximum thickness of the nitride layer is smaller than 1000 Å.

REFERENCES:
patent: 4402128 (1983-09-01), Blackstone
patent: 5482871 (1996-01-01), Pollack
patent: 6646283 (2003-11-01), Akimoto et al.
patent: 2002/0076862 (2002-06-01), Lu et al.
patent: 2002/0109158 (2002-08-01), Forbes et al.
patent: 2002/0179927 (2002-12-01), Lu et al.

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