Polysilicon thin-film transistor and method for fabricating the

Details Polysilicon thin-film transistor and method for fabricating the Polysilicon thin-film transistor and method for fabricating the

1996-07-26

1998-09-08

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257327, H01L 2976, H01L 31036, H01L 31112

Patent

active

058048375

ABSTRACT:
To accomplish the objects of the present invention, among others, the present invention provides a thin-film transistor that has a channel region operatively having an offset region only during turn-off. Source and drain regions self-aligned with different ends of the channel region. A gate region is formed on a gate insulating layer disposed over the channel region and has a main gate accepting a gate voltage, a subgate which comes into ohmic contact with the source region, and a junction gate for forming a rectifying junction between the main gate and subgate.

REFERENCES:
patent: 5124769 (1992-06-01), Tanaka et al.
patent: 5554552 (1996-09-01), Chi
Min et al., "Polysilicon Thin Film Transistors with PN Junction Gate", International Conference on Solid State Devices and Materials (SSDM '95), pp. 52-54, Aug. 1995.

Affiliated with

Also associated with

Rating

Polysilicon thin-film transistor and method for fabricating the does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polysilicon thin-film transistor and method for fabricating the , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon thin-film transistor and method for fabricating the will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1284027