Polysilicon thin film fabrication method

Details Polysilicon thin film fabrication method Polysilicon thin film fabrication method

2007-03-20

2007-03-20

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S308000, C438S378000, C438S486000

Reexamination Certificate

active

11231854

ABSTRACT:
A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.

REFERENCES:
patent: 6605496 (2003-08-01), Yamazaki

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