Polysilicon structure, thin film transistor panel using the...

Details Polysilicon structure, thin film transistor panel using the... Polysilicon structure, thin film transistor panel using the...

2007-12-04

2007-12-04

Prenty, Mark V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S166000

Reexamination Certificate

active

11689668

ABSTRACT:
A method for forming a polysilicon structure is provided. An amorphous silicon structure with a first amorphous silicon region and a second amorphous silicon region is formed in a first region and a second region of a substrate, respectively. The first amorphous silicon region is thinner than the second amorphous silicon region. The amorphous silicon structure is crystallized to form the polysilicon structure with a first polysilicon region and a second polysilicon region corresponding to the first amorphous silicon region and the second amorphous silicon region.

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