Polysilicon resistor with low thermal activation energy

Details Polysilicon resistor with low thermal activation energy Polysilicon resistor with low thermal activation energy

1982-12-15

1987-04-14

Larkins, William D.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 51, 357 59, H01L 2904, H01L 2986

Patent

active

046583785

ABSTRACT:
An improved load resistor for a VLSI memory cell is formed in polysilicon by having P-type (such as boron) impurities in a middle region and n-type (such as phosphorous or arsenic) impurities on the sides, with the concentrations being in a range so that the thermal activation energy is below about 0.5 eV. Further, the middle region can be doped additionally with arsenic or phosphorous in an amount equal to or less than the boron. This gives good leakage current masking over a range of -55.degree. to +125.degree. C. without drawing excessive current, and is less sensitive to impurities.

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