Polysilicon residue free process by thermal treatment

Details Polysilicon residue free process by thermal treatment Polysilicon residue free process by thermal treatment

1998-03-18

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438585, 438684, 438906, 438787, 438719, 438694, 438303, 438657, H01L 214763

Patent

active

060777761

ABSTRACT:
A new method of removing impurities and moisture from the surface of a wafer and thereby preventing polysilicon residue is described. A dielectric layer is provided over the surface of a semiconductor substrate. A polysilicon layer is deposited overlying the dielectric layer. A hard mask layer is deposited overlying the polysilicon layer and patterned to form a hard mask. The wafer is cleaned whereby moisture and impurities form on the surfaces of the hard mask and the polysilicon layer. Thereafter, the wafer is heat treated whereby the moisture and impurities are removed. Thereafter, the polysilicon layer is etched away where it is not covered by the hard mask to complete formation of a polysilicon line on a wafer in the fabrication of an integrated circuit.

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patent: 5635102 (1997-06-01), Mehta
patent: 5858847 (1999-01-01), Zhou et al.
Wolf "Silicon Processing for the VLSI Era" vol. 1 pp. 516-519, 1986.

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